? semiconductor components industries, llc, 1994 october, 2016 ? rev. 11 1 publication order number: mmbt2222lt1/d mmbt2222l, mmbt2222al, smmbt2222al general purpose transistors npn silicon features ? these devices are pb?free, halogen free/bfr free and are rohs compliant ? s prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable maximum ratings rating symbol value unit collector ?emitter voltage mmbt2222l mmbt2222al, smmbt2222al v ceo 30 40 vdc collector ?base voltage mmbt2222l mmbt2222al, smmbt2222al v cbo 60 75 vdc emitter ?base voltage mmbt2222l mmbt2222al, smmbt2222al v ebo 5.0 6.0 vdc collector current ? continuous i c 600 madc collector current ? peak (note 3) i cm 1100 madc thermal characteristics characteristic symbol max unit total device dissipation fr? 5 board (note 1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction?to?ambient r ja 556 c/w total device dissipation alumina substrate (note 2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction?to?ambient r ja 417 c/w junction and storage temperature range t j , t stg ?55 to +150 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. fr? 5 = 1.0 0.75 0.062 in. 2. alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. reference soa curve. sot?23 case 318 style 6 marking diagram xxx = 1p or m1b m = date code* = pb?free package collector 3 1 base 2 emitter (note: microdot may be in either location) *date code orientation and/or overbar may vary depending upon manufacturing location. see detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. ordering information 1 2 1 3 xxx m www. onsemi.com
mmbt2222l, mmbt2222al, smmbt2222al www. onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ?emitter breakdown voltage (i c = 10 madc, i b = 0) mmbt2222 mmbt2222a v (br)ceo 30 40 ? ? vdc collector ?base breakdown voltage (i c = 10 adc, i e = 0) mmbt2222 mmbt2222a v (br)cbo 60 75 ? ? vdc emitter ?base breakdown voltage (i e = 10 adc, i c = 0) mmbt2222 mmbt2222a v (br)ebo 5.0 6.0 ? ? vdc collector cutoff current (v ce = 60 vdc, v eb(off) = 3.0 vdc) mmbt2222a, smmbt2222a i cex ? 10 nadc collector cutoff current (v cb = 50 vdc, i e = 0) mmbt2222 (v cb = 60 vdc, i e = 0) mmbt2222a, smmbt2222a (v cb = 50 vdc, i e = 0, t a = 125 c) mmbt2222 (v cb = 60 vdc, i e = 0, t a = 125 c) mmbt2222a, smmbt2222a i cbo ? ? ? ? 0.01 0.01 10 10 adc emitter cutoff current (v eb = 3.0 vdc, i c = 0) mmbt2222a, smmbt2222a i ebo ? 100 nadc base cutoff current (v ce = 60 vdc, v eb(off) = 3.0 vdc) mmbt2222a, smmbt2222a i bl ? 20 nadc on characteristics dc current gain (i c = 0.1 madc, v ce = 10 vdc) (i c = 1.0 madc, v ce = 10 vdc) (i c = 10 madc, v ce = 10 vdc) (i c = 10 madc, v ce = 10 vdc, t a = ?55 c) mmbt2222a only (i c = 150 madc, v ce = 10 vdc) (note 4) (i c = 150 madc, v ce = 1.0 vdc) (note 4) (i c = 500 madc, v ce = 10 vdc) (note 4) mmbt2222 mmbt2222a, smmbt2222a h fe 35 50 75 35 100 50 30 40 ? ? ? ? 300 ? ? ? ? collector ?emitter saturation voltage (note 4) (i c = 150 madc, i b = 15 madc) mmbt2222 mmbt2222a, smmbt2222a (i c = 500 madc, i b = 50 madc) mmbt2222 mmbt2222a, smmbt2222a v ce(sat) ? ? ? ? 0.4 0.3 1.6 1.0 vdc base ?emitter saturation voltage (note 4) (i c = 150 madc, i b = 15 madc) mmbt2222 mmbt2222a, smmbt2222a (i c = 500 madc, i b = 50 madc) mmbt2222 mmbt2222a, smmbt2222a v be(sat) ? 0.6 ? ? 1.3 1.2 2.6 2.0 vdc small? signal characteristics current ?gain ? bandwidth product (note 5) (i c = 20 madc, v ce = 20 vdc, f = 100 mhz) mmbt2222 mmbt2222a, smmbt2222a f t 250 300 ? ? mhz output capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c obo ? 8.0 pf input capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) mmbt2222 mmbt2222a, smmbt2222a c ibo ? ? 30 25 pf input impedance (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) mmbt2222a, smmbt2222a (i c = 10 madc, v ce = 10 vdc, f = 1.0 khz) mmbt2222a, smmbt2222a h ie 2.0 0.25 8.0 1.25 k voltage feedback ratio (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) mmbt2222a, smmbt2222a (i c = 10 madc, v ce = 10 vdc, f = 1.0 khz) mmbt2222a, smmbt2222a h re ? ? 8.0 4.0 x 10 ?4 small ?signal current gain (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) mmbt2222a, smmbt2222a (i c = 10 madc, v ce = 10 vdc, f = 1.0 khz) mmbt2222a, smmbt2222a h fe 50 75 300 375 ?
mmbt2222l, mmbt2222al, smmbt2222al www. onsemi.com 3 electrical characteristics (t a = 25 c unless otherwise noted) characteristic unit max min symbol small? signal characteristics output admittance (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) mmbt2222a, smmbt2222a (i c = 10 madc, v ce = 10 vdc, f = 1.0 khz) mmbt2222a, smmbt2222a h oe 5.0 25 35 200 mhos collector base time constant (i e = 20 madc, v cb = 20 vdc, f = 31.8 mhz) mmbt2222a, smmbt2222a rb, c c ? 150 ps noise figure (i c = 100 adc, v ce = 10 vdc, r s = 1.0 k , f = 1.0 khz) mmbt2222a, smmbt2222a nf ? 4.0 db switching characteristics (mmbt2222a only) delay time (v cc = 30 vdc, v be(off) = ? 0.5 vdc, i c = 150 madc, i b1 = 15 madc) t d ? 10 ns rise time t r ? 25 storage time (v cc = 30 vdc, i c = 150 madc, i b1 = i b2 = 15 madc) t s ? 225 ns fall time t f ? 60 product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 4. pulse test: pulse width 300 s, duty cycle 2.0%. 5. f t is defined as the frequency at which |h fe | extrapolates to unity. figure 1. turn?on time figure 2. turn?off time switching time equivalent test circuits scope rise time < 4 ns *total shunt capacitance of test jig, connectors, and oscilloscope. +16 v -2 v < 2 ns 0 1.0 to 100 s, duty cycle 2.0% 1 k +30 v 200 c s * < 10 pf +16 v -14 v 0 < 20 ns 1.0 to 100 s, duty cycle 2.0% 1 k +30 v 200 c s * < 10 pf -4 v 1n914 1000 10 20 30 50 70 100 200 300 500 700 1.0 k 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 i c , collector current (ma) figure 3. dc current gain h fe , dc current gain t j = 125 c 25 c -55 c v ce = 1.0 v v ce = 10 v
mmbt2222l, mmbt2222al, smmbt2222al www. onsemi.com 4 v ce , collector-emitter voltage (volts) 1.0 0.8 0.6 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 i b , base current (ma) figure 4. collector saturation region t j = 25 c i c = 1.0 ma 10 ma 150 ma 500 ma figure 5. turn ?on time i c , collector current (ma) 70 100 200 50 t, time (ns) 10 20 70 5.0 100 5.0 7.0 30 50 200 10 30 7.0 20 i c /i b = 10 t j = 25 c t r @ v cc = 30 v t d @ v eb(off) = 2.0 v t d @ v eb(off) = 0 3.0 2.0 300 500 500 t, time (ns) 5.0 7.0 10 20 30 50 70 100 200 300 figure 6. turn ?off time i c , collector current (ma) 10 20 70 100 5.0 7.0 30 50 200 300 500 v cc = 30 v i c /i b = 10 i b1 = i b2 t j = 25 c t s = t s - 1/8 t f t f figure 7. frequency effects f, frequency (khz) 4.0 6.0 8.0 10 2.0 0.1 figure 8. source resistance effects r s , source resistance (ohms) nf, noise figure (db) 1.0 2.0 5.0 10 20 50 0.2 0.5 0 100 nf, noise figure (db) 0.01 0.02 0.05 r s = optimum r s = source r s = resistance i c = 1.0 ma, r s = 150 500 a, r s = 200 100 a, r s = 2.0 k 50 a, r s = 4.0 k f = 1.0 khz i c = 50 a 100 a 500 a 1.0 ma 4.0 6.0 8.0 10 2.0 0 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
mmbt2222l, mmbt2222al, smmbt2222al www. onsemi.com 5 figure 9. capacitances reverse voltage (volts) 3.0 5.0 7.0 10 2.0 0.1 capacitance (pf) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.2 0.3 0.5 0.7 c cb 20 30 c eb figure 10. current?gain bandwidth product i c , collector current (ma) 70 100 200 300 50 500 f t , current-gain bandwidth product (mhz) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 v ce = 20 v t j = 25 c figure 11. collector emitter saturation voltage vs. collector current figure 12. base emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0.01 0.1 1 1 0.1 0.01 0.001 0.2 0.3 0.5 0.7 0.8 1.0 1.1 1.3 figure 13. base emitter voltage vs. collector current i c , collector current (a) 1 0.1 0.01 0.001 0.2 0.3 0.5 0.6 0.7 0.9 1.1 1.2 v ce(sat) , collector?emitter saturation voltage (v) v be(sat) , base?emitter saturation voltage (v) v be(on) , base?emitter voltage (v) i c /i b = 10 150 c ?55 c 25 c 0.4 0.6 0.9 1.2 i c /i b = 10 150 c ?55 c 25 c 0.4 0.8 1.0 v ce = 1 v 150 c ?55 c 25 c figure 14. temperature coefficients i c , collector current (ma) -0.5 0 +0.5 coefficient (mv/ c) -1.0 -1.5 -2.5 r vc for v ce(sat) r vb for v be -2.0 0.1 1.0 2.0 5.0 10 20 50 0.2 0.5 100 200 50 0
mmbt2222l, mmbt2222al, smmbt2222al www. onsemi.com 6 figure 15. safe operating area v ce (vdc) 100 10 1 0.1 0.01 0.001 0.01 0.1 1 10 ic (a) single pulse test @ t a = 25 c thermal limit 100 ms 1 s 10 ms 1 ms ordering information device specific marking code package shipping ? mmbt2222lt1g m1b sot?23 (pb?free) 3000 / tape & reel mmbt2222alt1g, smmbt2222alt1g 1p sot?23 (pb?free) 3000 / tape & reel mmbt2222lt3g m1b sot?23 (pb?free) 10,000 / tape & reel mmbt2222alt3g, SMMBT2222ALT3G 1p sot?23 (pb?free) 10,000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. *s prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and p pap capable.
mmbt2222l, mmbt2222al, smmbt2222al www. onsemi.com 7 package dimensions sot?23 (to?236) case 318?08 issue ar d a1 3 1 2 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of the base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. soldering footprint* view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.000 b 0.37 0.44 0.50 0.015 c 0.08 0.14 0.20 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.30 0.43 0.55 0.012 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.027 c 0 ??? 10 0 ??? 10 t t 3x top view side view end view 2.90 0.80 dimensions: millimeters 0.90 pitch 3x 3x 0.95 recommended *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. style 6: pin 1. base 2. emitter 3. collector on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular pu rpose, nor does on semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without li mitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, regulatio ns and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semicond uctor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typicals? mus t be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the rights of others. on semiconduc tor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or si milar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, cost s, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer . this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 mmbt2222lt1/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative ?
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